Gallium nitride material research and application have always been at the forefront and a hotspot in global semiconductor research. In addition to advantages such as stability, high-temperature resistance, and high-voltage resistance, gallium nitride also boasts excellent thermal conductivity, compact size, and low energy consumption. These properties enable gallium nitride to be widely used in fields such as transformers and chargers. The rapid technological iteration of fast-charging consumer products in the past has sufficiently demonstrated that consumer electronics like laptops, tablets, and mobile phones (low-voltage fast charging) are currently the primary application areas for gallium nitride. In the medium to long term, medium-voltage applications such as industrial power supplies, data centers, new energy vehicles (EVs), charging piles, and high-power LED power supplies will be the main drivers of the next wave of growth for gallium nitride.
Gallium Nitride (GaN) in data centers can bring significant advantages in terms of energy efficiency, system upgrades, and more.
Energy Efficiency: The operating power of data center power supplies typically ranges from 3kW to 6kW, and the mainstream 650V GaN devices are very suitable for this. The overall power conversion efficiency of existing data center power supplies is around 75%, while using GaN devices can increase the efficiency to 87.5%. According to calculations, for a data center with 10 racks per group, a GaN-based PSU can save 3 million USD in electricity costs and reduce CO2 emissions by more than 100 tons annually.
Matching PSU Replacement Requirements: GaN technology aligns well with the trends in data center PSU power supply architecture replacement. On one hand, the PSU output voltage will increase from 12V to 48V, which means distribution losses can be reduced by 90%, making high-efficiency 100V GaN devices increasingly popular. On the other hand, PSU manufacturers aim to increase power supply from 3kW to 6kW and raise power density from 45W/in3 to 100W/in3, which can only be achieved by wide-bandgap semiconductor devices like GaN.
Wireless charging technology has two types: electromagnetic induction and coupled resonance. GaN technology enables more powerful and efficient wireless charging systems, unlocking the true potential of wireless charging and ultimately allowing users to be free from wires. The core components of circuits in wireless charging systems, such as the input rectifier circuit (AC/DC), high-frequency inverter circuit (DC/AC), high-frequency rectifier circuit, and constant voltage and constant current conversion circuits (DC/DC), are power semiconductor devices. Compared to traditional Si power devices, GaN devices have smaller parasitic capacitance, faster switching speed, higher operating frequency, and lower switching losses. Wireless power transfer systems based on GaN devices can significantly improve system performance, which is crucial for the development and promotion of wireless charging systems. Research shows that GaN device systems can achieve a wireless charging distance of over 40mm, about 8 times that of traditional technologies, and the power can exceed 500W, with an efficiency of up to 95%.
